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SM363J

R. F. Molded Chokes

[Ohmite Mfg. Co.]

ETCList of Unclassifed Manufacturers

未分类制造商

丝印代码:T146;Digital transistors (built-in resistor)

Features In addition to the features of regular digital transistors, 1) Low VCE(sat) makes these transistors optimal for muting circuits. VCE(sat) = 40mV (Typ.) (IC/IB = 50mA/2.5mA) 2) They can be used at high current (IC = 600mA).

ROHM

罗姆

Silicon NPN Transistor RF Power Amp, PO = 4W

Description: The NTE363 is a 12.5V epitaxial silicon NPN planer transistor designed primarily for UHF communications. Features: ● Designed for UHF Military and Commercial Equipment ● 4W (Min) with Greater than 8dB Gain ● Withstands Infinite VSWR Under Operating Conditions ● Low Inductance St

NTE

LM363 Precision Instrumentation Amplifier

文件:452.17 Kbytes Page:22 Pages

NSC

国半

丝印代码:C363ES;Digital transistors (built-in resistors)

文件:105.46 Kbytes Page:4 Pages

ROHM

罗姆

LM363 Precision Instrumentation Amplifier

文件:452.17 Kbytes Page:22 Pages

NSC

国半

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