DMX512差分

SM17500P是并联连接、差分信号传输的转码芯片，输入协议兼容并扩展DMX512（1990）信号协议。内置选择将输入的DMX512 协议数据转码为DMX512 协议数据或归零码SID数据。信号差分传输，带载点数多，抗干扰能力强，传输距离远。 •内置电源稳压功能，输入电源电压：5V~36V\n•兼容并扩展 DMX512(1990)协议\n•控制方式：差分并联，最大支持 4096 个通道\n•差分信号传输速率：250kbps~750kbps\n•纯转发模式：自身不带灯，画面数据全部转发驱动我司归零码或 DMX512 协议的串联芯片\n•支持转码输出协议：归零码或 DMX512 协议\n•两种写地址模式：自通道数写址＆控制器常规写址\n•转发控制通道数：128 通道\n•写自通道数功能：最大通道数 255\n•写参数：上电亮灯状态，无信号亮灯状态，电流增益模式与电流增益位选择，转码输出协议选择，转码输出 DMX512 协议频率设置，上电;

LED恒流驱动芯片

DMX512（1990）协议、并联的LED恒流驱动芯片，输入电源电压范围宽，自适应数据传输速率250KHz～750KHz，有256级和65536级灰度供选择。

LED恒流驱动芯片

SM17512P是并联方式、差分信号传输的四通道LED驱动输出控制专用芯片，兼容并扩展DMX512（1990）信号协议。\n •内置电源稳压功能，输入电源电压：5V~24V\n•自定义 OUT R/G/B/W 端口上电默认显示效果\n•2 秒无输入信号，可选择切换至上电默认显示效果或保持最后一帧显示状态\n•内置 1/2/3/4 通道选择功能\n•OUT R/G/B/W 各 4bits 电流增益调节\n•封装形式：SOP16\n;

包装：盒 描述：ADAPTER MODULE ANTIFUSE 175CPGA 开发板，套件，编程器 可编程适配器，插座

包装：散装 描述：PROGRAMMING ADAPTER 开发板，套件，编程器 可编程适配器，插座

N-CHANNEL MOS BROADBAND RF POWER FETs

The RF MOSFET Line RF Power ​​​​​​​Field-Effect Transistors N–Channel Enhancement–Mode Designedfor broadband commercial and military applications using push pull circuitsat frequencies to 500 MHz. The high power, high gain and broadband performanceof these devices makes possible solid state

N-CHANNEL MOS BROADBAND RF POWER FETs

The RF MOSFET Line RF Power ​​​​​​​Field-Effect Transistors N–Channel Enhancement–Mode Designedfor broadband commercial and military applications using push pull circuitsat frequencies to 500 MHz. The high power, high gain and broadband performanceof these devices makes possible solid state

N-CHANNEL BROADBAND RF POWER FETs

Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance

Silicon Complementary Transistors High Voltage, Medium Power Switch

Description: The NTE38 (PNP) and NTE175 (NPN) complementary silicon transistors are designed for high–speed switching and linear amplifier applications for high–voltage operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers. Fea

L-Band PA DRIVER AMPLIFIER

DESCRIPTION µPG175TA is a GaAs MMIC for PA driver amplifier with variable gain function which was developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. FEATURES • Low Operation Voltage: