Voltage 40V ~150V 1.0 Amp Surface Mount Schottky Barrier Rectifiers

FEATURES • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High

Schottky Rectifier

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 150 Watts Peak Minimum Gain = 7.8 dB • 100 Tested for Load Mismatch

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 150 Watts Peak Minimum Gain = 7.8 dB • 100 Tested for Load Mismatch

DUAL SWITCHING REGULATOR CONTROL CIRCUIT

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

DUAL SWITCHING REGULATOR CONTROL CIRCUIT

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

DUAL SWITCHING REGULATOR CONTROL CIRCUIT

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N