SCHOTTKY DIODE REVERSE VOLTAGE 20V TO 200V FORWARD CURRENT 1.0A

DESCRIPTION The SM 1 20A SM 1 200A are available in SM A Package. FEATURES  Metal silicon junction, majority carrier conduction  For surface mounted applications  Low power loss, high efficiency  High forward surge current capability  For use in low voltage, high frequency inverter

SCHOTTKY DIODE REVERSE VOLTAGE 20V TO 200V FORWARD CURRENT 1.0A

DESCRIPTION The SM 1 20A SM 1 200A are available in SM A Package. FEATURES  Metal silicon junction, majority carrier conduction  For surface mounted applications  Low power loss, high efficiency  High forward surge current capability  For use in low voltage, high frequency inverter

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR???

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

Optocoupler with Phototransistor Output

Description The TCDT1120(G) series consists of a phototransis tor optically coupled to a gallium arsenide infrared emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output fo

P-Channel Enhancement-Mode Vertical DMOS Power FETs???

P-Channel Enhancement-Mode Vertical DMOS Power FETs Applications □ Motor controls □ Converters □ Amplifiers □ Switches □ Power supply circuits □ Drivers (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.)

DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

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N-Channel Enhancement-Mode Vertical DMOS Power FETs???

文件：136.07 Kbytes Page：4 Pages