丝印代码：SL245F；Surface Mount Schottky Rectifiers

Features Low profile package Ideal for automated placement Guardring for overvoltage protection Low VF Low power losses, high efficiency High forward surge capability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

丝印代码：SL245F；Schottky Barrier Rectifiers

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肖特基二极管

2A,45V,Surface Mount Schottky Barrier Rectifiers

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD246 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE245 (NPN) and NTE246 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in general purpose amplifier applications. Features: • High DC Current Gain: hFE = 4000 Typ @ IC = 5A • Monolithic Construction with B

N-channel silicon field-effect transistors

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N-channel silicon field-effect transistors

文件：97.4 Kbytes Page：11 Pages

VHF power MOS transistor

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