MOSFET

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=-11.4A@ TC=25℃ ·Drain Source Voltage- : VDSS=-60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.175Ω(Max)@VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

60V P-Channel MOSFET

Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high

P-Channel QFET MOSFET -60 V, -11.4 A, 175 m廓

Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high

60V P-Channel MOSFET

文件：653.88 Kbytes Page：9 Pages

60V P-Channel MOSFET

文件：653.88 Kbytes Page：9 Pages