1700 - 2200 MHz High Gain and Linearity Single Downconversion Mixer for 2G/3G Base Station Applications

文件：429.52 Kbytes Page：11 Pages

1700 - 2200 MHz High Gain and Linearity Single Downconversion Mixer for 2G/3G Base Station Applications

文件：429.52 Kbytes Page：11 Pages

1700-2200 MHz High Gain and Linearity Single Downconversion Mixer for 2G/3G Transceivers

1700 ??2200 MHz High Gain and Linearity Single Downconversion Mixer for 2G/3G Base Station Applications

文件：235.24 Kbytes Page：14 Pages

Radiation Hardened Driver-GaN Power Stage with 100V GaN FET

Features ▪ Production testing and qualification follow the standard AS6294/1 ▪ 100V, 7.5mΩ eGaN FET with integrated 4.5V gate driver ▪ Wide driver bias range of 4.5V to 13.2V ▪ Up to 16.5V logic inputs (regardless of VDD level) • Inverting and non-inverting inputs ▪ Integrated driver optim

Radiation Hardened Driver-GaN Power Stage with 100V GaN FET

Features ▪ Production testing and qualification follow the standard AS6294/1 ▪ 100V, 7.5mΩ eGaN FET with integrated 4.5V gate driver ▪ Wide driver bias range of 4.5V to 13.2V ▪ Up to 16.5V logic inputs (regardless of VDD level) • Inverting and non-inverting inputs ▪ Integrated driver optim

Radiation Hardened Driver-GaN Power Stage with 100V GaN FET

Features ▪ Production testing and qualification follow the standard AS6294/1 ▪ 100V, 7.5mΩ eGaN FET with integrated 4.5V gate driver ▪ Wide driver bias range of 4.5V to 13.2V ▪ Up to 16.5V logic inputs (regardless of VDD level) • Inverting and non-inverting inputs ▪ Integrated driver optim

Radiation Hardened Driver-GaN Power Stage with 100V GaN FET

Features ▪ Production testing and qualification follow the standard AS6294/1 ▪ 100V, 7.5mΩ eGaN FET with integrated 4.5V gate driver ▪ Wide driver bias range of 4.5V to 13.2V ▪ Up to 16.5V logic inputs (regardless of VDD level) • Inverting and non-inverting inputs ▪ Integrated driver optim

MMCX PLUG R/A SEMI-RIGID, RG405

文件：137.04 Kbytes Page：2 Pages