Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● 50V, 3A, RDS(ON) = 130mΩ @VGS = 10V. RDS(ON) = 200mΩ @VGS = 4.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handing capability. ● Surface Mount Package.

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance. These

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