MINIATURE SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 100 Volts Forward Current - 8.0 Amperes FEATURES . Plastic package has Underwriters Laboratory Flammability Classification 94V-0 . Metal sliicon junction, majority carriet conduction . Guard ring for overcoltage protection . Low power loss, high efficien

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ For surface mounted applications ♦ Low reverse leakage ♦ Built-in strain relief,ideal for automated placement ♦ High forward surge current capability ♦ High temperature soldering guaranteed: 25

8.0 Amp Schottky Rectifier 20 to 100 Volts

Features • High Current Capability • Low Forward Voltage • For Surface Mount Application • Lead Free Finish/Rohs Compliant (Note1) (PSuffix designates Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Halogen free available

8.0 Amp Schottky Rectifier 20 to 100 Volts

Features • High Current Capability • Low Forward Voltage • For Surface Mount Application • Lead Free Finish/Rohs Compliant (Note1) (PSuffix designates Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Halogen free available

8.0 Amp Schottky Rectifier 20 to 100 Volts

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8.0 Amp Schottky Rectifier 20 to 100 Volts For Surface Mount Application

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Schottky Barrier Rectifiers

肖特基二极管

SWITCHMODE??Power Rectifirers DPAK Surface Mount Package

This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. This state of the art d

NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE

DESCRIPTION The µPA835TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES • Low noise Q1 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain Q

NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE

DESCRIPTION The µPA835TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES • Low noise Q1 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain Q

LMC835 Digital Controlled Graphic Equalizer

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LMC835 Digital Controlled Graphic Equalizer

文件：474.13 Kbytes Page：18 Pages