Dual N-Channel 30 V (D-S) MOSFET With Schottky Diode

FEATURES • TrenchFET® Gen IV power MOSFET • SkyFET® low side MOSFET with integrated Schottky • Very low RDS x Qg FOM improves efficiency • 100 Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • CPU core power •

Dual N-Channel 30 V (D-S) MOSFET With Schottky Diode

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Features • Integrated gate protection diodes • Low noise figure • Low feedback capacitance • High cross modulation performance • Low input capacitance • High AGC-range • High gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz)

Features ● Short-channel transistor with high S/C quality factor ● For low-noise, gain-controlled input stages up to 1 GHz

Silicon N-Channel MOSFET Tetrode

Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz

IC intended for use as a PWM controller

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Silicon N-channel dual-gate MOS-FETs

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