Reduced switching and conduction losses

文件：143.35 Kbytes Page：7 Pages

E Series Power MOSFET

EF Series Power MOSFET With Fast Body Diode

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS •

E Series Power MOSFET

文件：175.16 Kbytes Page：9 Pages

E Series Power MOSFET

文件：175.16 Kbytes Page：9 Pages

SMPS MOSFET

Features and Benefits ● SuperFast body diode eliminates the need for external diodes in ZVS applications ● Lower Gate Charge Results in Simple Drive Requirements ● Enhanced dV/dt capabilities offer improved ruggedness ● Higher Gate voltage threshold offers improved noise immunity Applications

Lower Gate Charge Results in Simple Drive Requirements

FEATURES • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications • Lower Gate Charge Results in Simple Drive Requirements • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise Immunity • Compliant to RoHS Direc

N-Channel Enhancement Mode MOSFET

文件：251.17 Kbytes Page：4 Pages

N-Channel Super Junction Power MOSFET

文件：600.95 Kbytes Page：6 Pages

HEXFET Power MOSFET

文件：200.08 Kbytes Page：9 Pages