iscN-Channel MOSFET Transistor

• DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(ON) =0.28Ω (MAX) • Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

E Series Power MOSFET

文件：293.59 Kbytes Page：8 Pages

E Series Power MOSFET

E Series Power MOSFET

文件：173.54 Kbytes Page：8 Pages

E Series Power MOSFET

文件：173.54 Kbytes Page：8 Pages

E Series Power MOSFET

文件：173.54 Kbytes Page：8 Pages

15 Amps, 650 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC 15N65 is an N-channel mode Power FET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pu

isc N-Channel MOSFET Transistor

文件：341.06 Kbytes Page：2 Pages

isc N-Channel MOSFET Transistor

文件：231.88 Kbytes Page：2 Pages

15A, 650V N-CHANNEL POWER MOSFET

文件：186.58 Kbytes Page：6 Pages

N-CHANNEL POWER MOSFET

文件：209.85 Kbytes Page：5 Pages