Power MOSFET

VDS (V) 200 V RDS(on) (Ω) VGS = 5 V 0.40 Qg (Max.) (nC) 40 Qgs (nC) 5.5 Qgd (nC) 24 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectivenes

Power MOSFET

VDS (V) 200 V RDS(on) (Ω) VGS = 5 V 0.40 Qg (Max.) (nC) 40 Qgs (nC) 5.5 Qgd (nC) 24 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectivenes

Power MOSFET

Surface-mount\nAvailable in tape and reel\nDynamic dv/dt rating;

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dv/dt rating • Repetitive avalanche rated • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • 150 °C operating temperature • Material categorization: for definitions of compliance please see www.vishay.com/doc

Power MOSFET

Available in Tape and Reel

文件：226.54 Kbytes Page：9 Pages

Power MOSFET

文件：265.88 Kbytes Page：10 Pages

Power MOSFET

文件：265.88 Kbytes Page：10 Pages

Power MOSFET

文件：265.88 Kbytes Page：10 Pages

Power MOSFET

文件：265.88 Kbytes Page：10 Pages

SWITCHMODE??Power Rectifirers DPAK Surface Mount Package

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SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 60 Volts CURRENT - 6 Ampere)

VOLTAGE 20 to 60 Volts CURRENT 6.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency.

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