VDS (V) 200 V

RDS(on) (Ω) VGS = 5 V 0.40

Qg (Max.) (nC) 40

Qgs (nC) 5.5

Qgd (nC) 24

Configuration Single

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Logic Level Gate Drive

• RDS(on) Specified at VGS = 4 V and 5 V

• 150 °C Operating Temperature

• Fast Switching

• Ease of Paralleling

• Lead (Pb)-free Available