位置：首页 > IC中文资料第11034页 > SIHFZ48
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SIHFZ48 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati | VISHAYVishay Siliconix 威世威世科技公司 |   | |
SIHFZ48 | Power MOSFET 文件：1.47414 Mbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
SIHFZ48 | Power MOSFET 文件：1.52086 Mbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
SIHFZ48 | Power MOSFET 文件：1.52086 Mbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
SIHFZ48 | Power MOSFET | VISHAYVishay Siliconix 威世威世科技公司 | | |
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Advanced process technology • Surface-mount (IRFZ48S, SiHFZ48S) • Low-profile through-hole (SiHFZ48L) • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides inf | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Advanced Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Advanced Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Advanced Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Advanced Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Advanced Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Advanced process technology • Dynamic dV/dt • 175 °C operating temperature • Fast switching • Fully avalanche rated • Drop in replacement of the IRFZ48, SiHFZ48 for linear / audio applications • Material categorization: for definitions of compliance please see www.vishay.com/do | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Advanced Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Advanced Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Advanced process technology • Surface-mount (IRFZ48S, SiHFZ48S) • Low-profile through-hole (SiHFZ48L) • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides inf | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.52086 Mbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：357.55 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：364.07 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：357.55 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：437.28 Kbytes Page：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.0182 Mbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：208.55 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：231.37 Kbytes Page：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：208.55 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：208.55 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：208.55 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：208.55 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：357.55 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：364.07 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：437.28 Kbytes Page：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：357.55 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：357.55 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：437.28 Kbytes Page：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |
SIHFZ48产品属性
- 类型
描述
- 型号
SIHFZ48
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
19+ |
D2PAK(TO-263) |
33675 |
||||
NK/南科功率 |
2025+ |
TO-263-2 |
986966 |
国产 |
|||
VISHAY/威世 |
23+ |
SOT263 |
7000 |
||||
V |
23+ |
D2PAK |
8560 |
受权代理!全新原装现货特价热卖! |
|||
Vishay |
25+ |
D2PAK(TO- |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
Vishay |
20+ |
D2PAK(TO-263) |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
VISHAY/威世 |
2022+ |
SOT263 |
29880 |
原厂代理 终端免费提供样品 |
|||
VBSEMI/台湾微碧 |
24+ |
D2PAK |
60000 |
全新原装现货 |
|||
VISHAY/威世 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
|||
VISHAY/威世 |
23+ |
D2PAK(TO-263) |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
SIHFZ48芯片相关品牌
SIHFZ48规格书下载地址
SIHFZ48参数引脚图相关
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2019-12-7
DdatasheetPDF页码索引
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