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SIHFR110价格
参考价格：￥1.8877
型号：SIHFR110TR-GE3 品牌：VIS 备注：这里有SIHFR110多少钱，2026年最近7天走势，今日出价，今日竞价，SIHFR110批发/采购报价，SIHFR110行情走势销售排行榜，SIHFR110报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SIHFR110 | Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR110, SiHFR110) • Available in tape and reel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation | VISHAYVishay Siliconix 威世威世科技公司 |   | |
SIHFR110 | Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power | VISHAYVishay Siliconix 威世威世科技公司 | | |
SIHFR110 | Dynamic dV/dt Rating Repetitive Avalanche Rated DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | |
SIHFR110 | Power MOSFET Dynamic dV/dt rating\nRepetitive avalanche rated\nSurface-mount (IRFR110, SiHFR110); | VISHAYVishay Siliconix 威世威世科技公司 | | |
Dynamic dV/dt Rating Repetitive Avalanche Rated DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dynamic dV/dt Rating Repetitive Avalanche Rated DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Dynamic dV/dt Rating Repetitive Avalanche Rated DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dynamic dV/dt Rating Repetitive Avalanche Rated DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Dynamic dV/dt Rating Repetitive Avalanche Rated DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dynamic dV/dt Rating Repetitive Avalanche Rated DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Power MOSFET 文件：782.87 Kbytes Page：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：782.87 Kbytes Page：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：782.87 Kbytes Page：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：782.87 Kbytes Page：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：782.87 Kbytes Page：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
POWER RECTIFIERS(1.0A,500-1000V)
| MOSPEC 统懋 | | ||
POWER RECTIFIERS(1.0A,500-1000V)
| MOSPEC 统懋 | | ||
SCHOTTKY BARRIER RECTIFIERS(1.0A,70-100V) Surface Mount Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERES 70 -100 VOLTS | MOSPEC 统懋 | | ||
SCHOTTKY BARRIER RECTIFIERS(1.0A,70-100V)
| MOSPEC 统懋 | | ||
POWER RECTIFIERS(1.0A,500-1000V) ULTRAFAST POWER RECTIFIERS 1.0 AMPERES 500 -- 1000 VOLTS | MOSPEC 统懋 | |
SIHFR110产品属性
- 类型
描述
- 型号
SIHFR110
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
20+ |
TO-252 |
100 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
SIAI |
24+ |
DFN3X3-8L |
9000000 |
一级代理/放心采购 |
|||
SAMSUNG |
2024+ |
DIP |
50000 |
原装现货 |
|||
- |
23+ |
NA |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
VISHAY/威世 |
新年份 |
TO-252 |
67410 |
一级代理原装正品现货,支持实单! |
|||
SAMSUNG |
22+ |
SIL-10 |
3000 |
原装正品,支持实单 |
|||
原厂 |
2023+ |
模块 |
600 |
专营模块,继电器,公司原装现货 |
|||
VISHAY |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
SAMSU |
25+ |
SOP3.9 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
24+ |
850 |
真实现货库存 |
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2019-12-7
DdatasheetPDF页码索引
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