位置：首页 > IC中文资料第7270页 > SIHFPC50
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SIHFPC50 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude | VISHAYVishay Siliconix 威世威世科技公司 |   | |
SIHFPC50 | Power MOSFET | VISHAYVishay Siliconix 威世威世科技公司 | | |
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Switch | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Switch | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFET technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. Thes | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFET technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. Thes | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：224.27 Kbytes Page：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：224.27 Kbytes Page：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：224.27 Kbytes Page：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET | VISHAYVishay Siliconix 威世威世科技公司 | |
SIHFPC50产品属性
- 类型
描述
- 型号
SIHFPC50
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
850 |
真实现货库存 |
|||||
SAMSUNG |
22+ |
SIL-10 |
3000 |
原装正品,支持实单 |
|||
SIAI |
24+ |
DFN3X3-8L |
9000000 |
一级代理/放心采购 |
|||
VISHAY/威世 |
23+ |
TO-247 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
FUJI |
模块 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
FUJI |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
SAM |
25+ |
DIP-28 |
394 |
全新原装正品支持含税 |
|||
SAMSU |
25+ |
SOP3.9 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
SAMSUNG |
2024+ |
DIP |
50000 |
原装现货 |
|||
原厂 |
2023+ |
模块 |
600 |
专营模块,继电器,公司原装现货 |
SIHFPC50规格书下载地址
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2019-12-7
DdatasheetPDF页码索引
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