Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinat

Power MOSFET

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinat

Power MOSFET

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NPN SILICON TRANSISTOR

FEATURES Power dissipation PCM : 0.4 W (Tamb=25°C) Collector current ICM : 0.1 A Collector-base voltage V(BR)CBO : 50 V

NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications?????????

NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications

Pre-Amplifier, Low Level & Low Noise

Pre-Amplifier, Low Level & Low Noise • High total power dissipation. (PT = 450mW) • High hFE and good linearity • Complementary to SS9015

Advanced Power MOSFET

FEATURES ❐ Avalanche Rugged Technology ❐ Rugged Gate Oxide Technology ❐ Lower Input Capacitance ❐ Improved Gate Charge ❐ Extended Safe Operating Area ❐ Lower Leakage Current : 10 µA (Max.) @ VDS = -60V ❐ Lower RDS(ON) : 0.362 Ω (Typ.)

Pre-Amplifier, Low Level & Low Noise

Pre-Amplifier, Low Level & Low Noise • High total power dissipation. (PT = 450mW) • High hFE and good linearity • Complementary to SS9015