Power MOSFET

VDS (V) 400 RDS(on) (Ω) VGS = 10 V 3.6 Qg (Max.) (nC) 17 Qgs (nC) 3.4 Qgd (nC) 8.5 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

Power MOSFET

Power MOSFET

VDS (V) 400 RDS(on) (Ω) VGS = 10 V 3.6 Qg (Max.) (nC) 17 Qgs (nC) 3.4 Qgd (nC) 8.5 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

Power MOSFET

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . designed for industrial and consumer applications such as temperature, light and speed control; process and remote controls; warning systems; capacitive discharge circuits and MPU interface. • Center Gate Geometry for Unifor

POWER RECTIFIERS(3.0A,500-1000V)

Surface Mount Ultrafast Power Rectifiers ULTRA FAST RECIFITERS 3.0 AMPERES 500 -- 1000 VOLTS

SCHOTTKY BARRIER RECTIFIERS(3.0A,70-100V)

SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 70 -100 VOLTS

Voltage Follower

文件：348.91 Kbytes Page：16 Pages

Voltage Follower

文件：348.91 Kbytes Page：16 Pages