位置：首页 > IC中文资料第7136页 > SIHFBC40AS
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SIHFBC40AS | Power MOSFET FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalancheanddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanche voltageandcurrent •EffectiveCossspecified •Materialcategorization:fordefinitionsofcompliance ple | VishayVishay Siliconix 威世科技 |  |   |
SIHFBC40AS | iscN-Channel MOSFET Transistor •DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=1.2Ω(MAX) •Enhancementmode: Vth=2to4V(VDS=10V,ID=0.25mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
SIHFBC40AS | N-Channel 650V (D-S) Power MOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | |
SIHFBC40AS | Power MOSFET FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalancheanddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanche voltageandcurrent •EffectiveCossspecified •Materialcategorization:fordefinitionsofcompliance pleaseseewww. | VishayVishay Siliconix 威世科技 | | |
Power MOSFET FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalancheanddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanche voltageandcurrent •EffectiveCossspecified •Materialcategorization:fordefinitionsofcompliance ple | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalancheanddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanche voltageandcurrent •EffectiveCossspecified •Materialcategorization:fordefinitionsofcompliance ple | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalancheanddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanche voltageandcurrent •EffectiveCossspecified •Materialcategorization:fordefinitionsofcompliance ple | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalancheanddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanche voltageandcurrent •EffectiveCossspecified •Materialcategorization:fordefinitionsofcompliance ple | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalancheanddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanche voltageandcurrent •EffectiveCossspecified •Materialcategorization:fordefinitionsofcompliance ple | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET 文件：387.52 Kbytes Page：10 Pages | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET 文件：387.52 Kbytes Page：10 Pages | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET 文件：387.52 Kbytes Page：10 Pages | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET 文件：387.52 Kbytes Page：10 Pages | VishayVishay Siliconix 威世科技 | | |
SIHFBC40AS产品属性
- 类型
描述
- 型号
SIHFBC40AS
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
22+ |
TO-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
VISHAY-威世 |
24+25+/26+27+ |
TO-263-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
VISHAY/威世 |
2022+ |
TO-263 |
30000 |
进口原装现货供应,原装 假一罚十 |
|||
Vishay |
18+ |
NA |
3000 |
进口原装正品优势供应QQ3171516190 |
|||
VISHAY/威世 |
2022+ |
TO-263 |
50000 |
原厂代理 终端免费提供样品 |
|||
apec |
2023+ |
TO-220 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
23+ |
N/A |
49200 |
正品授权货源可靠 |
||||
VB |
2019 |
TO-220AB |
55000 |
绝对原装正品假一罚十! |
|||
VISHAY/威世 |
TO-263 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
||||
Vishay |
2020+ |
TO-220 |
52320 |
公司代理品牌,原装现货超低价清仓! |
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SIHFBC40AS规格书下载地址
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DdatasheetPDF页码索引
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