Power MOSFET

FEATURES • Surface-mount (IRFBC20S, SiHFBC20S) • Low-profile through-hole (IRFBC20L, SiHFBC20L) • Available in tape and reel (IRFBC20, SiiHFBC20S) • Dynamic dV/dt rating • 150 °C operating temperature • Fast switching • Fully avalanche rated • Material categorization: for definitions of co

N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

Power MOSFET

Surface-mount (IRFBC20S, SiHFBC20S)\nLow-profile through-hole (IRFBC20L, SiHFBC20L)\nAvailable in tape and reel (IRFBC20, SiiHFBC20S);

Power MOSFET

文件：247.05 Kbytes Page：8 Pages

Power MOSFET

文件：247.05 Kbytes Page：8 Pages

Power MOSFET

文件：329.76 Kbytes Page：11 Pages

Power MOSFET

文件：329.76 Kbytes Page：11 Pages

Power MOSFET

文件：247.05 Kbytes Page：8 Pages

Power MOSFET

文件：247.05 Kbytes Page：8 Pages

Power MOSFET

文件：329.76 Kbytes Page：11 Pages

Power MOSFET

文件：329.76 Kbytes Page：11 Pages