E Series Power MOSFET

FEATURES • Low figure-of-merit (FOM): Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATONS • Hard s

E Series Power MOSFET

N-Channel 500V(D-S) Super Junction Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Low RDS(on) • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Switch Mode Power Supply (

25A 500V N-channel enhanced field effect transistor

文件：978.81 Kbytes Page：6 Pages

This new power MOSFET realized the low switching loss and low switching noise

文件：495.6 Kbytes Page：2 Pages

THINKISEMI 20A,500V N-CHANNEL PLANAR STRIPE POWER MOSFETs

文件：1.81261 Mbytes Page：7 Pages

Power switch circuit of adaptor and charger.

文件：648.54 Kbytes Page：9 Pages