E Series Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Computing

E Series Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Comput

iscN-Channel MOSFET Transistor

文件：319.73 Kbytes Page：2 Pages

E Series Power MOSFET

E Series Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Comput

E Series Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Comput

E Series Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Comput

12 Amps, 500 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 12N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanch

Fast Switching

• FEATURES • Drain Current ID= 12A@ TC=25℃ • Drain Source Voltage- : VDSS= 500V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.5Ω(Max) • Fast Switching •APPLICATIONS •Switch mode power supply.

Power MOSFETs

FEATURES • Low Figure-of-Merit Ron x Qg • 100 Avalanche Tested • Gate Charge Improved • Trr/Qrr Improved • Compliant to RoHS Directive 2002/95/EC

12A, 500V N-CHANNEL POWER MOSFET

文件：167.59 Kbytes Page：6 Pages

N-Channel 650 V (D-S) MOSFET

文件：1.039369 Mbytes Page：8 Pages