Dual P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® power MOSFET • PWM optimized • 100 Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Battery and load switching  for notebook PCs

Dual P-Channel 30 V (D-S) MOSFET

Dual P-Channel 30 V (D-S) MOSFET

文件：482.54 Kbytes Page：13 Pages

Dual P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® power MOSFET • PWM optimized • 100 Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Battery and load switching  for notebook PCs

Dual P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® power MOSFET • PWM optimized • 100 Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Battery and load switching  for notebook PCs

Dual P-Channel 30 V (D-S) MOSFET

文件：309.67 Kbytes Page：14 Pages

Dual P-Channel 30 V (D-S) MOSFET

文件：482.54 Kbytes Page：13 Pages

8-Channel, 10- and 12-Bit ADCs with I2CCompatible

GENERAL DESCRIPTION The AD7997/AD7998 are 8-channel, 10- and 12-bit, low power, successive approximation ADCs with an I2C-compatible interface. The parts operate from a single 2.7 V to 5.5 V power supply and feature a 2 µs conversion time. The parts contain an 8-channel multiplexer and track-an

10.7 Gb/s Transimpedance Amplifier

GENERAL DESCRIPTION The VSC7997 and VSC7998 are 10.7Gb/s high performance transim-pedance amplifiers designed for use in optical communication networks including Sonet OC-192/SDH STM-64 and 10G Ethernet fiber links. The devices are intended for use with a photodetector and are capable of amplifyi

Category 5e Nonbonded-Pair Outside Plant Cable

文件：108.25 Kbytes Page：3 Pages

DDR Termination Regulator

文件：382.15 Kbytes Page：1 Pages