30V P-Channel PowerTrench MOSFET

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (–4.5V – 20V). Features • –6.5 A, –30 V RDS(ON) = 19 mΩ

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFETs

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFETs

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFETs

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFETs

P-Channel 30-V (D-S) MOSFET

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30V P-Channel PowerTrench MOSFET

P-Channel 30-V (D-S) MOSFET

文件：206.26 Kbytes Page：10 Pages

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO6415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO6415 is Pb-free (meets ROH

P-Channel MOSFET

■ Features ● VDS (V) =-20V ● ID =-3.3A (VGS =-10V) ● RDS(ON)

P-Channel MOSFET

■ Features ● VDS (V) =-20V ● ID =-3.3A (VGS =-10V) ● RDS(ON)

CUSTOMER PRODUCT SPECIFICATION

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20V P-Channel MOSFET

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