General Description

This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (–4.5V – 20V).

Features

• –6.5 A, –30 V

RDS(ON) = 19 mΩ @ VGS = –10 V

RDS(ON) = 30 mΩ @ VGS = –4.5 V

• Extended VGSS range (±20V) for battery applications

• High performance trench technology for extremely low RDS(ON)

• Low profile TSSOP-8 package

Applications

• Battery protection

• DC/DC conversion

• Power management

• Load switch