10–810 MHZ I2C PROGRAMMABLE XO/VCXO

Features  I2C programmable output frequencies from 10 to 810 MHz  0.5 ps RMS phase jitter  Superior power supply rejection: 0.3–0.4 ps additive jitter  Available LVPECL, CMOS, LVDS, and CML outputs  1.8, 2.5, or 3.3 V supply  Pin- and register-compatible with Si570/571  Programma

Programmable with 28 parts per trillion frequency resolution

文件：234.25 Kbytes Page：28 Pages

ANSI C REFERENCE DESIGN WITH OPTIONAL NON-VOLATILE OUTPUT FREQUENCY

文件：1.30835 Mbytes Page：44 Pages

Any Frequency General Purpose Voltage Controlled Osciallator (VCXO)

Dual P-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package - Small Footprint Area - Low On-Resistance - Thin 0.8 mm Profile • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load

Dual P-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package - Small Footprint Area - Low On-Resistance - Thin 0.8 mm Profile • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load

Dual P-Channel 20 V (D-S) MOSFET

S1 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package - Small Footprint Area - Low On-Resistance - Thin 0.8 mm Profile • Typical ESD Performance 1500 V in HBM • Compliant to RoHS Directive 2002/95/

Dual P-Channel 20 V (D-S) MOSFET

S1 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package - Small Footprint Area - Low On-Resistance - Thin 0.8 mm Profile • Typical ESD Performance 1500 V in HBM • Compliant to RoHS Directive 2002/95/

Dual P-Channel 30 V (D-S) MOSFET

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Dual P-Channel 30 V (D-S) MOSFET

Dual P-Channel 20 V (D-S) MOSFET

Dual P-Channel 20 V (D-S) MOSFET

文件：168.11 Kbytes Page：9 Pages

EPITAXIAL PLANAR NPN TRANSISTOR (HIGH FREQUENCY, VHF BAND AMPLIFIER)

HIGH FREQUENCY APPLICATION. VHF BAND AMPLIFIER APPLICATION.

Surface mount Si-Epitaxial PlanarTransistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

NPN Silicon RF Transistor (Common emitter IF/RF amplifier Low feedback capacitance due to shield diffusion)

NPN Silicon RF Transistor ● Common emitter IF/RF amplifier ● Low feedback capacitance due to shield diffusion

Thermal paper roll

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5MM LED

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