Dual P-Channel 20 V (D-S) MOSFET

S1 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package - Small Footprint Area - Low On-Resistance - Thin 0.8 mm Profile • Typical ESD Performance 1500 V in HBM • Compliant to RoHS Directive 2002/95/

Dual P-Channel 20 V (D-S) MOSFET

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Dual P-Channel 20 V (D-S) MOSFET

Dual P-Channel 20 V (D-S) MOSFET

S1 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package - Small Footprint Area - Low On-Resistance - Thin 0.8 mm Profile • Typical ESD Performance 1500 V in HBM • Compliant to RoHS Directive 2002/95/

X-ducer SILICON PRESSURE SENSORS

0 to 1000 kPa (0 to 150 PSI) On-Chip Signal conditional 0.2 V to 4.7 V Output, Temperature Compensated and Calibrated, Silicon Pressure Sensor The MPX5999D piezoresistive transducer is a state–of–the–art pressure sensor designed for a wide range of applications, but particularly for those employi

X-ducer SILICON PRESSURE SENSORS

0 to 1000 kPa (0 to 150 PSI) On-Chip Signal conditional 0.2 V to 4.7 V Output, Temperature Compensated and Calibrated, Silicon Pressure Sensor The MPX5999D piezoresistive transducer is a state–of–the–art pressure sensor designed for a wide range of applications, but particularly for those employi

Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated

Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated The MPX5999D piezoresistive transducer is a state-of-the-art pressure sensor designed for a wide range of applications, but particularly for those employing a microcontroller or microprocessor wi

Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated

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