Dual P-Channel 1.8-V (G-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs: 1.8 V Rated • Compliant to RoHS Directive 2002/95/EC

Dual P-Channel 1.8-V (G-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs: 1.8 V Rated • Compliant to RoHS Directive 2002/95/EC

Dual P-Channel 1.8-V (G-S) MOSFET

Dual P-Channel 1.8-V (G-S) MOSFET

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Dual P-Channel 1.8-V (G-S) MOSFET

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 68A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.7mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Surge Clamping, Transient Overvoltage Suppressor Bidirectional

Description: The NTE4900 series of silicon Transient Suppressors designed to protect voltage sensitive components from high energy voltage transients. Transient over voltage suppressor devices have become very important as a consequence of their high surge capability, extremely fast response time

Louvered Plugs

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Multi-Channel BERT 12.5 Gb/s

文件：2.44678 Mbytes Page：12 Pages

Power MOSFET 30 V, 68 A, Single N?묬hannel, DPAK/IPAK

文件：118.08 Kbytes Page：7 Pages