丝印代码：SI4435DY；30V P-Channel PowerTrench MOSFET

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Applications · Power management · Load sw

30V P-Channel PowerTrench MOSFET

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Features • –8.8 A, –30 V RDS(ON) = 20 mΩ @ VGS

Power MOSFET(Vdss=-30V, Rds(on)=0.020ohm

VDSS = -30V RDS(on) = 0.020Ω Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use i

P-Channel MOSFET

■ Features ● VDS=-30V ● RDS(on)=0.02Ω @VGS=-10V ● RDS(on)=0.035Ω @VGS=-4.5V

-30V 单个 P 通道 HEXFET Power MOSFET, 采用 SO-8 封装

\n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• P 通道MOSFET ;

场效应管

P-Channel 30-V (D-S) MOSFET

P-Channel MOSFET

■ Features ● VDS=-30V ● RDS(on)=0.02Ω @VGS=-10V ● RDS(on)=0.035Ω @VGS=-4.5V ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish

HEXFET Power MOSFET

VDSS = -30V RDS(on) = 0.020Ω Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use i

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • Load Switch • Battery Switch

Ultra Low On-Resistance

VDSS = -30V RDS(on) = 0.020Ω Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use i

Simple Drive Requirements

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Simple Drive Requirements

文件：113.3 Kbytes Page：8 Pages

ARX4435 Transceiver for Macair H009 Specification

General Description The Aeroflex Laboratories Incorporated model ARX4435 and ARX4435FP are new generation monolithic transceivers which provides compliance with Macair H009 data bus requirements. The model ARX4435 and ARX4435FP perform the front-end analog function of inputting and outputtin

ARX4435 Transceiver for Macair H009 Specification

General Description The Aeroflex Laboratories Incorporated model ARX4435 and ARX4435FP are new generation monolithic transceivers which provides compliance with Macair H009 data bus requirements. The model ARX4435 and ARX4435FP perform the front-end analog function of inputting and outputtin

ARX4435N Transceiver for Macair H009 Specification

General Description The Aeroflex Laboratories Incorporated model ARX4435N and ARX4435NFP are new generation monolithic transceivers which provides compliance with Macair H009 data bus requirements. The ARX4435N and ARX4435NFP perform the front-end analog function of inputting and outputting data

ARX4435N Transceiver for Macair H009 Specification

General Description The Aeroflex Laboratories Incorporated model ARX4435N and ARX4435NFP are new generation monolithic transceivers which provides compliance with Macair H009 data bus requirements. The ARX4435N and ARX4435NFP perform the front-end analog function of inputting and outputting data

P-Channel Logic Level PowerTrench?줞OSFET

General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Features • –9 A, –30 V. RDS(ON) = 0.017 Ω @ VGS =