HEXFET Power MOSFET

VDSS = -30V RDS(on) = 0.020Ω Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use i

Simple Drive Requirements

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Simple Drive Requirements

文件：113.3 Kbytes Page：8 Pages

P-Channel Enhancement Mode Power MOSFET

Description The 4435 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

ARX4435 Transceiver for Macair H009 Specification

General Description The Aeroflex Laboratories Incorporated model ARX4435 and ARX4435FP are new generation monolithic transceivers which provides compliance with Macair H009 data bus requirements. The model ARX4435 and ARX4435FP perform the front-end analog function of inputting and outputtin

P-Channel MOSFET

Plastic-Encapsulate Mosfets FEATURES • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • VDS=-30V,ID=-8A • RDS(on) (m-ohm) 0.020 @ VGS = - 10V ,ID= -8A 0.030 @ VGS = -4.5V,ID= -5A APPLICATIONS • Load Switches • B

P-Channel 30-V (D-S) MOSFET

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DELAY MODULES,TTL,SURFACE MOUNTED

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