DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS

[SILICON LAB] Description The Si4133 is a monolithic integrated circuit that performs both IF and dual band RF synthesis for wireless communications applications. The Si4133 includes three VCOs, loop filters, reference and VCO dividers, and phase detectors. Divider and power-down settings are

DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS

Description The Si4133 is a monolithic integrated circuit that performs both IF and dual band RF synthesis for wireless communications applications. The Si4133 includes three VCOs, loop filters, reference and VCO dividers, and phase detectors. Divider and power down settings are programmable with

DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS

FEATURES  Dual-band RF synthesizers RF1: 900 MHz to 1.8 GHz RF2: 750 MHz to 1.5 GHz  IF synthesizer IF: 62.5 to 1000 MHz  Integrated VCOs, loop filters, varactors, and resonators  Minimal (2) number of external components required  Low phase noise  Programmable powerdown mod

DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS

[SILICON LAB] Description The Si4133 is a monolithic integrated circuit that performs both IF and dual band RF synthesis for wireless communications applications. The Si4133 includes three VCOs, loop filters, reference and VCO dividers, and phase detectors. Divider and power-down settings are

DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS

[SILICON LAB] Description The Si4133 is a monolithic integrated circuit that performs both IF and dual band RF synthesis for wireless communications applications. The Si4133 includes three VCOs, loop filters, reference and VCO dividers, and phase detectors. Divider and power-down settings are

DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS

FEATURES  Dual-band RF synthesizers RF1: 900 MHz to 1.8 GHz RF2: 750 MHz to 1.5 GHz  IF synthesizer IF: 62.5 to 1000 MHz  Integrated VCOs, loop filters, varactors, and resonators  Minimal (2) number of external components required  Low phase noise  Programmable powerdown mod

DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS

Description The Si4133 is a monolithic integrated circuit that performs both IF and dual band RF synthesis for wireless communications applications. The Si4133 includes three VCOs, loop filters, reference and VCO dividers, and phase detectors. Divider and power down settings are programmable with

RF synthesizer

Si4122-D-GM RF synthesizers perform IF and dual-band, low-noise RF frequency synthesis for wireless personal communications applications. Si4122-D-GM ICs address the price-sensitive, low-power, high-performance requirements for personal wireless communications by substantially reducing external pass

DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS

FEATURES  Dual-band RF synthesizers RF1: 900 MHz to 1.8 GHz RF2: 750 MHz to 1.5 GHz  IF synthesizer IF: 62.5 to 1000 MHz  Integrated VCOs, loop filters, varactors, and resonators  Minimal (2) number of external components required  Low phase noise  Programmable powerdown mod

RF synthesizer

Si4122-D-GT RF synthesizers perform IF and dual-band, low-noise RF frequency synthesis for wireless personal communications applications. Si4122-D-GT ICs address the price-sensitive, low-power, high-performance requirements for personal wireless communications by substantially reducing external pass

DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS

Description The Si4133 is a monolithic integrated circuit that performs both IF and dual band RF synthesis for wireless communications applications. The Si4133 includes three VCOs, loop filters, reference and VCO dividers, and phase detectors. Divider and power down settings are programmable with

DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR GSM AND GPRS WIRELESS COMMUNICATIONS

Description The Si4133G is a monolithic integrated circuit that performs both IF and dual-band RF synthesis for GSM and GPRS wireless communications applications. The Si4133G includes three VCOs, loop filters, reference and VCO dividers, and phase detectors. Divider and power down settings are pr

DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR GSM AND GPRS WIRELESS COMMUNICATIONS

Description The Si4133G is a monolithic integrated circuit that performs both IF and dual-band RF synthesis for GSM and GPRS wireless communications applications. The Si4133G includes three VCOs, loop filters, reference and VCO dividers, and phase detectors. Divider and power down settings are pr

DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR GSM AND GPRS WIRELESS COMMUNICATIONS

Description The Si4133G is a monolithic integrated circuit that performs both IF and dual-band RF synthesis for GSM and GPRS wireless communications applications. The Si4133G includes three VCOs, loop filters, reference and VCO dividers, and phase detectors. Divider and power down settings are pr

封装/外壳：28-VFQFN 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC SYNTH RF2/IF SNGL-BAND 28MLP 集成电路（IC） 时钟发生器，PLL，频率合成器

封装/外壳：28-VFQFN 裸露焊盘 包装：卷带（TR） 描述：IC SYNTH RF2/IF SNGL-BAND 28MLP 集成电路（IC） 时钟发生器，PLL，频率合成器

射频无线杂项 Single-Band RF Synthesizer (RF2/IF), lead free

N-Channel 40 V (D-S) MOSFET

文件：206.34 Kbytes Page：9 Pages

N-Channel 40-V (D-S) MOSFET

文件：274.66 Kbytes Page：10 Pages

N-Channel 40-V (D-S) MOSFET

文件：272.02 Kbytes Page：10 Pages

N-Channel 40 V (D-S) MOSFET

文件：206.34 Kbytes Page：9 Pages

N-Channel 40 V (D-S) MOSFET

文件：206.34 Kbytes Page：9 Pages

N-Channel 40-V (D-S) MOSFET

文件：272.02 Kbytes Page：10 Pages

4mW, 180MHz, 2000V/Us High Speed Buffer

GENERAL DESCRIPTION The CLM4122 family are low power, high speed unity gain buffers that slew at 2000V/µs, having a small signal bandwidth of 180MHz, delivers 60mA, yet draws only 800µA supply current. FEATURES • High Slew Rate. . . . . . . . . . . . . . . . . . . . . . . . . . 2000V/µs • Wide

4mW, 180MHz, 2000V/Us High Speed Buffer

GENERAL DESCRIPTION The CLM4122 family are low power, high speed unity gain buffers that slew at 2000V/µs, having a small signal bandwidth of 180MHz, delivers 60mA, yet draws only 800µA supply current. FEATURES • High Slew Rate. . . . . . . . . . . . . . . . . . . . . . . . . . 2000V/µs • Wide

PNP General Purpose Amplifier

PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Sourced from Process 66. See 2N3906 for characteristics.

AF Power Amplifier (Split Power Supply) (15W 15W min, THD = 0.4)

Features • The STK4102II series (STK4122II) and STK4101V series (high-grade type) are pin-compatible in the out put range of 6W to 50W and enable easy designing. • Small-sized package whose pin assignment is the same as that of the STK4101II series • Built-in muting circuit to cut off var

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • New S type package, allowing supply with the radial taping