N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low

N-Channel Logic Level Enhancement Mode Field Effect Transistor

N-Channel 2.5-V (G-S) MOSFETs

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC

N-Channel 2.5-V (G-S) MOSFETs

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC

N-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Low On-Resistance • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters, High Speed Switching

N-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Low On-Resistance • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters, High Speed Switching

N-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Low On-Resistance • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters, High Speed Switching

N-Channel 20 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • DC/DC Converters • Boost Converters • Load Switch

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description\nThese N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low vo ■ 4.1 A, 20 V. \n   RDS(ON) = 0.06 W @ VGS = 4.5 V\n   RDS(ON) = 0.075 W @ VGS =2.7 V.\n■ Proprietary SuperSOTTM-6 package design using copper\n   lead frame for superior thermal and electrical capabilities.\n■ High density cell design for extremely low RDS(ON).\n■ Exceptional on-resistance and maxi;

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low

N-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Low On-Resistance • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters, High Speed Switching

N-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Low On-Resistance • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters, High Speed Switching

N-Channel 2.5-V (G-S) MOSFET

文件：61.52 Kbytes Page：4 Pages

N-Channel 2.5-V (G-S) MOSFET

文件：112.07 Kbytes Page：5 Pages

N-Channel 2.5-V (G-S) MOSFET

文件：183.3 Kbytes Page：9 Pages

N-Channel 2.5-V (G-S) MOSFET

文件：185.46 Kbytes Page：9 Pages

N-Channel 2.5-V (G-S) MOSFET

文件：189.87 Kbytes Page：9 Pages

N-Channel 2.5-V (G-S) MOSFET

文件：112.07 Kbytes Page：5 Pages

N-Channel 2.5-V (G-S) MOSFET

文件：183.3 Kbytes Page：9 Pages

N-Channel 2.5-V (G-S) MOSFET

文件：189.87 Kbytes Page：9 Pages

N-Channel 2.5-V (G-S) MOSFET

文件：112.07 Kbytes Page：5 Pages

N-Channel 2.5-V (G-S) MOSFET

文件：61.52 Kbytes Page：4 Pages

N-Channel 2.5-V (G-S) MOSFET

文件：185.46 Kbytes Page：9 Pages

N-Channel 20 V (D-S) MOSFET

N-Channel 20 V (D-S) MOSFET

文件：219.91 Kbytes Page：11 Pages

짹15kV ESD-Protected, 짹60V Fault-Protected, 10Mbps, Fail-Safe RS-485/J1708 Transceivers

General Description The MAX3440E–MAX3444E fault-protected RS-485 and J1708 transceivers feature ±60V protection from signal faults on communication bus lines. Each device contains one differential line driver with three-state output and one differential line receiver with three-state input. The 1

짹15kV ESD-Protected, 짹60V Fault-Protected, 10Mbps, Fail-Safe RS-485/J1708 Transceivers

General Description The MAX3440E–MAX3444E fault-protected RS-485 and J1708 transceivers feature ±60V protection from signal faults on communication bus lines. Each device contains one differential line driver with three-state output and one differential line receiver with three-state input. The 1

짹15kV ESD-Protected, 짹60V Fault-Protected, 10Mbps, Fail-Safe RS-485/J1708 Transceivers

General Description The MAX3440E–MAX3444E fault-protected RS-485 and J1708 transceivers feature ±60V protection from signal faults on communication bus lines. Each device contains one differential line driver with three-state output and one differential line receiver with three-state input. The 1