丝印代码：D7***；P-Channel 200-V (D-S) MOSFET

文件：89.17 Kbytes Page：6 Pages

P-Channel 200-V (D-S) MOSFET

P-Channel 200V (D-S) MOSFET

FEATURES •Halogen-free According to IEC 61249-2-21 Available •TrenchFET® Power MOSFET •Ultra Low On-Resistance •Small Size APPLICATIONS •Active Clamp Circuits in DC/DC Power Supplies

P-Channel 200-V (D-S) MOSFET

文件：89.17 Kbytes Page：6 Pages

Adjustable, High-Linearity, SiGe Dual-Band LNA/Mixer ICs

General Description The MAX2320/MAX2321/MAX2322/MAX2324/MAX2326/MAX2327 high-performance silicon germanium (SiGe) receiver front-end ICs set a new industry standard forlow noise and high linearity at a low supply current. This family integrates a variety of unique features such as an LO frequency

Adjustable, High-Linearity, SiGe Dual-Band LNA/Mixer ICs

General Description The MAX2320/MAX2321/MAX2322/MAX2324/MAX2326/MAX2327 high-performance silicon germanium (SiGe) receiver front-end ICs set a new industry standard forlow noise and high linearity at a low supply current. This family integrates a variety of unique features such as an LO frequency

Silicon NPN Transistor High Voltage, High Speed Switch

Description: The NTE2327 is a silicon NPN transistor in a TO126 type package designed for use in converters, inverters, switching regulators, motor control systems and switching applications.

2.5-A SENSITIVE GATE SILICON TRIACS

[GE SOLID STATE] 2.5A Sensitive Gate Triacs For AC Power Switching

2.5-A SENSITIVE GATE SILICON TRIACS

[GE SOLID STATE] 2.5A Sensitive Gate Triacs For AC Power Switching