丝印代码：D3JSE；P-Channel MOSFET

Features VDS (V) =-30V ID =-4.2 A (VGS =-10V) RDS(ON)

丝印代码：D3JSE；P-Channel MOSFET

Features ● VDS(V)=-30V ● ID =-4.2 A (VGS =-10V) ● RDS(ON)

MOS（场效应管）

P-Channel 20-V (D-S) MOSFET

P-Channel Enhancement MOSFET

文件：1.71416 Mbytes Page：5 Pages

Triple-Supply Power Management IC for Powering FPGAs and DSPs

文件：1.31298 Mbytes Page：29 Pages

丝印代码：D3***；P-Channel 20-V (D-S) MOSFET

文件：96.14 Kbytes Page：6 Pages

丝印代码：D3***；P-Channel 20-V (D-S) MOSFET

文件：42.4 Kbytes Page：5 Pages

P-Channel 20-V (D-S) MOSFET

文件：201.65 Kbytes Page：9 Pages

P-Channel 20-V (D-S) MOSFET

文件：164.08 Kbytes Page：8 Pages

P-Channel 20-V (D-S) MOSFET

文件：96.14 Kbytes Page：6 Pages

P-Channel 20-V (D-S) MOSFET

文件：201.65 Kbytes Page：9 Pages

P-Channel 20-V (D-S) MOSFET

文件：164.08 Kbytes Page：8 Pages

P-Channel Enhancement MOSFET

文件：1.79169 Mbytes Page：5 Pages

P-Channel MOSFET

文件：1.7465 Mbytes Page：5 Pages

P-Channel MOSFET

文件：1.78801 Mbytes Page：5 Pages

R-C Thermal Model Parameters

文件：185.25 Kbytes Page：3 Pages

P-Channel 20-V (D-S) MOSFET

文件：96.14 Kbytes Page：6 Pages

P-Channel 20-V (D-S) MOSFET

文件：96.14 Kbytes Page：6 Pages

P-Channel 20-V (D-S) MOSFET

文件：197.25 Kbytes Page：9 Pages

P-Channel 30 V (D-S) MOSFET

文件：1.04698 Mbytes Page：9 Pages

Triple/Dual-Mode CDMA LNA/Mixers

General Description The MAX2323/MAX2325 are low-noise amplifier (LNA) plus mixer ICs optimized for code-division multiple-access (CDMA) applications in both cellular and PCS bands. The MAX2323 addresses dual-band, triple-mode CDMA applications by providing switched signal paths for cellular FM, c

Silicon NPN Transistor Quad, Amplifier

Silicon NPN Transistor Quad, Amplifier

3V GENERAL PURPOSE AMPLIFIER

Product Description The RF2323 is a general purpose, low-cost silicon amplifier designed for operation from a 3V supply. The circuit configuration with resistive feedback allows for broadband cascadable amplification. Capacitive compensation extends the bandwidth of the amplifier and input stage

3V GENERAL PURPOSE AMPLIFIER

Product Description The RF2323 is a general purpose, low-cost silicon amplifier designed for operation from a 3V supply. The circuit configuration with resistive feedback allows for broadband cascadable amplification. Capacitive compensation extends the bandwidth of the amplifier and input stage

SENSITIVE GATE TRIACs 2.5 AMPERES RMS 200 thru 600 VOLTS

. . . designed primarily for ac power switching. The gate sensitivity of these triacs permits the use of economical transistorized or integrated circuit control circuits, and it enhances their use in low-power phase control and load-switching applications. • Very High Gate Sensitivity • Low On-S