20 V N-Channel Enhancement Mode MOSFET

VDS = 20V RDS(ON), Vgs@4.5V, Ids@5.0A

N- CHANNEL MOSFET in a SOT-23 Plastic Package

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MOSFET

场效应管

Small Signal MOSFETS

丝印代码：A12；UMW SI2312A

Features VDS (V) = 20V ID = 6 A (VGS =4.5V) RDS(ON)

丝印代码：A12；MOSFET

Features VDS (V) = 20V ID = 6 A (VGS =4.5V) RDS(ON)

N-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC

N-Channel 20 V (D-S) MOSFET

FEATURES • TrenchFET® power MOSFET • 100 Rg tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • DC/DC converters • Load switch for portable applications

N-Channel 20 V (D-S) MOSFET

FEATURES • TrenchFET® power MOSFET • 100 Rg tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • DC/DC converters • Load switch for portable applications

N-Channel 20 V (D-S) MOSFET

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丝印代码：M2***；N-Channel 20-V (D-S) MOSFET

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N-Channel 20 V (D-S) MOSFET

文件：185.52 Kbytes Page：7 Pages

N-Channel 20 V (D-S) MOSFET

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N-Channel 20 V (D-S) MOSFET

文件：203.8 Kbytes Page：7 Pages

N-Channel 20 V (D-S) MOSFET

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N-Channel 20 V (D-S) MOSFET

文件：203.8 Kbytes Page：7 Pages

N-Channel 20 V (D-S) MOSFET

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N-Channel 20 V (D-S) MOSFET

文件：203.8 Kbytes Page：7 Pages

N-Channel 20 V (D-S) MOSFET

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N-Channel Enhancement MOSFET

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N-Channel 20-V (D-S) MOSFET

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N-Channel 20 -V (D-S) MOSFET

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N-Channel 20 -V (D-S) MOSFET

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N-Channel Enhancement MOSFET

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N-Channel MOSFET

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N-Channel MOSFET

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N-Channel 20-V (D-S) MOSFET

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N-Channel 20 V (D-S) MOSFET

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9-bit 20MSPS Video A/D Converter

Description The CXD2312R is a 9-bit CMOS A/D converter for video applications. This IC is ideally suited for the A/D conversion of video signals in TVs, VCRs, camcorders, etc. Features • Resolution: 9-bit ±0.5 LSB (D.L.E.) • Maximum sampling frequency: 20MSPS • Low power consumption: 130mW (a

Silicon NPN Transistor High Voltage, High Speed Switch

Description: The NTE2312 is a silicon NPN transistor in a TO220 type package designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. This device is particularly suited for 115V and 220V switch–mode applications such as switching regulators, inverter

LINEAR GENERAL PURPOSE AMPLIFIER

Product Description The RF2312 is a general purpose, low cost high linearity RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Tran sistor (HBT) process, and has been designed for use as an easily cascadable 75Ωgain block. The gain flatness of

LINEAR GENERAL PURPOSE AMPLIFIER

Product Description The RF2312 is a general purpose, low cost high linearity RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Tran sistor (HBT) process, and has been designed for use as an easily cascadable 75Ωgain block. The gain flatness of

PLLatinum??Ultra Low Power Frequency Synthesizer for RF Personal Communications

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