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SGW50N60价格
参考价格：￥26.5621
型号：SGW50N60HSFKSA1 品牌：Infineon 备注：这里有SGW50N60多少钱，2026年最近7天走势，今日出价，今日竞价，SGW50N60批发/采购报价，SGW50N60行情走势销售排行榜，SGW50N60报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
High Speed IGBT in NPT-technology •30 lower Eoffcompared to previous generation •Short circuit withstand time – 10 µs •Designed for operation above 30 kHz •NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoffincrease with temperature - very tight parameter distribution • | Infineon 英飞凌 |   | ||
High Speed IGBT in NPT-technology 30 lower Eoff compared to previous generation High Speed IGBT in NPT-technology • 30 lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tigh | Infineon 英飞凌 | | ||
High Speed IGBT in NPT-technology 30 lower Eoff compared to previous generation High Speed IGBT in NPT-technology • 30 lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tigh | Infineon 英飞凌 | | ||
分立式IGBT | Infineon 英飞凌 | | ||
封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 100A 416W TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | ||
IGBT - Field Stop II 文件：242.78 Kbytes Page：11 Pages | ONSEMI 安森美半导体 | | ||
Power MOSFET 文件：153.27 Kbytes Page：6 Pages | IXYS 艾赛斯 | | ||
Polar3 HiperFET Power MOSFET 文件：173.07 Kbytes Page：5 Pages | IXYS 艾赛斯 | | ||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：345.38 Kbytes Page：8 Pages | UTC 友顺 | | ||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：345.38 Kbytes Page：8 Pages | UTC 友顺 | |
SGW50N60产品属性
- 类型
描述
- 型号
SGW50N60
- 功能描述
IGBT 晶体管 HIGH SPEED NPT TECH 600V 50A
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
NA/ |
383 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
FAIRCHILD/仙童 |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
FAIRCHILD/仙童 |
24+ |
NA |
990000 |
明嘉莱只做原装正品现货 |
|||
INFINEON |
24+ |
TO-247 |
8500 |
原厂原包原装公司现货,假一赔十,低价出售 |
|||
INFINEON/英飞凌 |
24+ |
TO247 |
42000 |
郑重承诺只做原装进口现货 |
|||
FAIRCHIL |
24+ |
TO-263 |
8866 |
||||
Infineon Technologies |
23+ |
TO2473 |
8000 |
只做原装现货 |
|||
INFINEON |
1932+ |
TO-247 |
263 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Infineon |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
INFINEON |
2526+ |
原厂封装 |
12500 |
15年芯片行业经验/只供原装正品:0755-83267371邹小姐 |
SGW50N60规格书下载地址
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