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SGW50N60HS价格
参考价格：￥26.5621
型号：SGW50N60HSFKSA1 品牌：Infineon 备注：这里有SGW50N60HS多少钱，2026年最近7天走势，今日出价，今日竞价，SGW50N60HS批发/采购报价，SGW50N60HS行情走势销售排行榜，SGW50N60HS报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SGW50N60HS | High Speed IGBT in NPT-technology •30 lower Eoffcompared to previous generation •Short circuit withstand time – 10 µs •Designed for operation above 30 kHz •NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoffincrease with temperature - very tight parameter distribution • | Infineon 英飞凌 |   | |
SGW50N60HS | High Speed IGBT in NPT-technology 30 lower Eoff compared to previous generation High Speed IGBT in NPT-technology • 30 lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tigh | Infineon 英飞凌 | | |
SGW50N60HS | 分立式IGBT | Infineon 英飞凌 | | |
High Speed IGBT in NPT-technology 30 lower Eoff compared to previous generation High Speed IGBT in NPT-technology • 30 lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tigh | Infineon 英飞凌 | | ||
封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 100A 416W TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | ||
IGBT - Field Stop II 文件：242.78 Kbytes Page：11 Pages | ONSEMI 安森美半导体 | | ||
Power MOSFET 文件：153.27 Kbytes Page：6 Pages | IXYS 艾赛斯 | | ||
Polar3 HiperFET Power MOSFET 文件：173.07 Kbytes Page：5 Pages | IXYS 艾赛斯 | | ||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：345.38 Kbytes Page：8 Pages | UTC 友顺 | | ||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：345.38 Kbytes Page：8 Pages | UTC 友顺 | |
SGW50N60HS产品属性
- 类型
描述
- 型号
SGW50N60HS
- 功能描述
IGBT 晶体管 HIGH SPEED NPT TECH 600V 50A
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
25+ |
PG-TO247- |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
INFINEON |
24+ |
原厂原封 |
5000 |
深圳现货价格优势 |
|||
INFINEON |
23+ |
PG-TO247-3 |
6800 |
只做原装正品现货 |
|||
INFINEON |
23+ |
TO-247 |
50000 |
全新原装正品现货,支持订货 |
|||
INFINEON |
24+ |
TO-247 |
8500 |
原厂原包原装公司现货,假一赔十,低价出售 |
|||
INFINEON/英飞凌 |
22+ |
TO247 |
12245 |
现货,原厂原装假一罚十! |
|||
原厂 |
2023+ |
模块 |
600 |
专营模块,继电器,公司原装现货 |
|||
24+ |
N/A |
70000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
英飞凌 |
20+ |
TO-247 |
38900 |
原装优势主营型号-可开原型号增税票 |
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SGW50N60HS规格书下载地址
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