位置：首页 > IC中文资料第4174页 > SGR2N60UFD
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SGR2N60UFD | Ultra-FastIGBT GeneralDescription FairchildsUFDseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.TheUFDseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features •Highspeeds | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  |   |
封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：管件 描述：IGBT 600V 2.4A 25W DPAK 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | | |
封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：管件 描述：IGBT 600V 2.4A 25W DPAK 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
2Amps,600VoltsN-CHANNELMOSFET DESCRIPTION TheUTC2N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsin | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 |  | | |
N2Amps竊?00VoltsN-ChannelMOSFET Description TheET2N60N-CeannelenhancementmodesilicongatepowerMOSFETisdesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,switchingconverters,solenoid,motordrivers,relaydrivers. Features ●RDS(ON)=5.00Ω@VGS=10V ●Lowgatecharge | ESTEKEstek Electronics Co. Ltd 伊泰克电子北京伊泰克电子有限公司 |  | | |
2Amps,600/650VoltsN-CHANNELPOWERMOSFET TheUTC2N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpowerupplies,PWM | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | | | |
600VN-ChannelPowerMOSFET Features ●RDS(ON) | DYELECDIYI Electronic Technology Co., Ltd. 迪一电子山东迪一电子科技有限公司 |  | | |
2A600VN-channelEnhancementModePowerMOSFET 文件：1.34834 Mbytes Page：13 Pages | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 |  | |
SGR2N60UFD产品属性
- 类型
描述
- 型号
SGR2N60UFD
- 功能描述
IGBT 晶体管
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD |
21+ |
TO-252 |
30490 |
原装现货库存 |
|||
FAIRCHILD/仙童 |
23+ |
NA/ |
1461 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
FAIRCHI |
2020+ |
TO-252 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
FAIRCHILD/仙童 |
22+ |
SOT252 |
100000 |
代理渠道/只做原装/可含税 |
|||
FAIRCHILD/仙童 |
23+ |
TO-252(DPAK) |
90000 |
只做原厂渠道价格优势可提供技术支持 |
|||
FAIRCHILD |
TO-252 |
893993 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
FAIRCHILD/仙童 |
2024+实力库存 |
1000 |
只做原厂渠道 可追溯货源 |
||||
ON-安森美 |
24+25+/26+27+ |
TO-252-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
FAIRCHIL |
08+(pbfree) |
TO-252 |
8866 |
||||
FAIRCHILD |
23+ |
TO-252(DPAK) |
12300 |
全新原装真实库存含13点增值税票! |
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SGR2N60UFD规格书下载地址
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DdatasheetPDF页码索引
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