位置：首页 > IC中文资料第3388页 > SGP5N60RUFDTU
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SGP5N60RUFDTU | 封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 8A 60W TO220 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMI 安森美半导体 |   | |
4.5 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching application | UTC 友顺 | | ||
4.5 Amps, 600/650 Volts N-CHANNEL MOSFET 文件：242.68 Kbytes Page：6 Pages | UTC 友顺 | | ||
5A, 600V N-CHANNEL POWER MOSFET 文件：254.02 Kbytes Page：6 Pages | UTC 友顺 | | ||
Power MOSFET 文件：1.06579 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
N-Channel Power MOSFET 文件：396.63 Kbytes Page：8 Pages | NELLSEMI 尼尔半导体 | |
SGP5N60RUFDTU产品属性
- 类型
描述
- 型号
SGP5N60RUFDTU
- 功能描述
IGBT 晶体管 Dis Short Circuit Rated IGBT
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
NA/ |
5250 |
原厂直销,现货供应,账期支持! |
|||
FAIRCHILD/仙童 |
2450+ |
TO-220 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
FAIRCHILD/仙童 |
06+ |
TO-220 |
2000 |
||||
FSC |
25+23+ |
TO-220 |
27105 |
绝对原装正品全新进口深圳现货 |
|||
24+ |
3000 |
自己现货 |
|||||
FSC |
0052+ |
TO-220 |
2000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
24+ |
N/A |
73000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
FAIRCHILD/仙童 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
|||
Fairchild/ON |
22+ |
TO220 |
9000 |
原厂渠道,现货配单 |
|||
FSC |
23+24 |
TO-220 |
29840 |
主营MOS管,二极.三极管,肖特基二极管.功率三极管 |
SGP5N60RUFDTU芯片相关品牌
SGP5N60RUFDTU规格书下载地址
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DdatasheetPDF页码索引
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