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SGP20N60价格
参考价格：￥11.5083
型号：SGP20N60XKSA1 品牌：Infineon 备注：这里有SGP20N60多少钱，2025年最近7天走势，今日出价，今日竞价，SGP20N60批发/采购报价，SGP20N60行情走势销售排行榜，SGP20N60报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SGP20N60 | Fast S-IGBT in NPT-technology Fast S-IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distributio | Infineon 英飞凌 |   | |
SGP20N60 | Short Circuit Rated IGBT 文件：540.1 Kbytes Page：7 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
SGP20N60 | IGBT Chip in NPT-technology 文件：80.25 Kbytes Page：4 Pages | Infineon 英飞凌 | | |
SGP20N60 | Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation 文件：364.5 Kbytes Page：12 Pages | Infineon 英飞凌 | | |
High Speed IGBT in NPT-technology High Speed IGBT in NPT-technology • 30 lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - | Infineon 英飞凌 | | ||
Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation 文件：364.5 Kbytes Page：12 Pages | Infineon 英飞凌 | | ||
High Speed IGBT in NPT-technology 30 lower Eoff compared to previous generation 文件：388.34 Kbytes Page：12 Pages | Infineon 英飞凌 | | ||
High Speed IGBT in NPT-technology 30 lower Eoff compared to previous generation 文件：388.34 Kbytes Page：12 Pages | Infineon 英飞凌 | | ||
封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 36A 178W TO220-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | ||
Short Circuit Rated IGBT 文件：540.1 Kbytes Page：7 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 40A 179W TO220-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | ||
20A, 600V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand | UTC 友顺 | | ||
HiPerFAST IGBT VCES = 600 V IC25 = 40 A VCE(sat)typ = 1.7 V tfi(typ) = 100 ns Features • International standard packages JEDEC TO-268 surface mountable and JEDEC TO-247 AD • High current handling capability • Latest generation HDMOSTM process • MOS Gate turn-on - drive simplicity | IXYS | | ||
Fast Switching 文件：95.42 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel 650-V (D-S) Super Junction MOSFET 文件：1.15549 Mbytes Page：11 Pages | VBSEMI 微碧半导体 | | ||
20A 600V N-channel enhanced field effect transistor 文件：833.85 Kbytes Page：6 Pages | YFWDIODE 佑风微电子 | |
SGP20N60产品属性
- 类型
描述
- 型号
SGP20N60
- 功能描述
IGBT 晶体管 FAST IGBT NPT TECH 600V 20A
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
NA/ |
17138 |
原厂直销,现货供应,账期支持! |
|||
Infineon(英飞凌) |
24+ |
标准封装 |
7068 |
原厂渠道供应,大量现货,原型号开票。 |
|||
INFINEON |
1822+ |
TO-220 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
INFINEON |
25+23+ |
TO-220 |
17744 |
绝对原装正品全新进口深圳现货 |
|||
INFINEON |
24+ |
TO-220 |
35200 |
一级代理/放心采购 |
|||
INFINEON/英飞凌 |
24+ |
TO-220 |
370 |
只做原厂渠道 可追溯货源 |
|||
INF |
24+ |
15000 |
|||||
INFINEON/英飞凌 |
2022+ |
TO-220 |
30000 |
进口原装现货供应,原装 假一罚十 |
|||
INFINEON |
24+ |
原厂原封 |
6000 |
原装进口香港现货价优 |
|||
INFINEON/英飞凌 |
2022+ |
TO-220 |
370 |
原厂代理 终端免费提供样品 |
SGP20N60规格书下载地址
SGP20N60参数引脚图相关
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DdatasheetPDF页码索引
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