Fast IGBT in NPT-technology

Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution

分立式IGBT

Infineon provides a huge IGBT portfolio addressing Soft Switching/Resonant and Hard Switching Topologies. ·30% lower E off compared to previous generation\n ·Short circuit withstand time – 10μs\n ·Designed for operation above 30kHz\n ·High ruggedness, temperature stable behaviour\n ·Pb-free lead plating; RoHS compliant\n ·Qualified according to JEDEC for target applications;

Fast IGBT in NPT-technology

文件：346.41 Kbytes Page：12 Pages

Fast IGBT in NPT-technology

文件：346.41 Kbytes Page：12 Pages

封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 12A 68W TO220-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Fast IGBT in NPT-technology

Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

•75 lower Eoffcompared to previous generation combined with low conduction losses •Short circuit withstand time – 10 µs •Designed for: Motor controls, Inverter •NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable beh

POWER FIELD EFFECT TRANSISTOR

文件：191.5 Kbytes Page：6 Pages

Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

文件：278.56 Kbytes Page：13 Pages

Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

文件：278.56 Kbytes Page：13 Pages