| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SGP04N60 | Fast IGBT in NPT-technology Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution | INFINEON 英飞凌 |   | |
SGP04N60 | 分立式IGBT Infineon provides a huge IGBT portfolio addressing Soft Switching/Resonant and Hard Switching Topologies. ·30% lower E off compared to previous generation\n ·Short circuit withstand time – 10μs\n ·Designed for operation above 30kHz\n ·High ruggedness, temperature stable behaviour\n ·Pb-free lead plating; RoHS compliant\n ·Qualified according to JEDEC for target applications; | INFINEON 英飞凌 | | |
SGP04N60 | Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation 文件：347.72 Kbytes Page：12 Pages | INFINEON 英飞凌 | | |
Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation 文件：347.72 Kbytes Page：12 Pages | INFINEON 英飞凌 | | ||
封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 9.4A 50W TO220-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | INFINEON 英飞凌 | | ||
Fast IGBT in NPT-technology Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution | INFINEON 英飞凌 | | ||
Fast IGBT in NPT-technology Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution | INFINEON 英飞凌 | | ||
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications | INFINEON 英飞凌 | | ||
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications | INFINEON 英飞凌 | | ||
POWER MOSFET 文件：329.86 Kbytes Page：7 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |
SGP04N60产品属性
- 类型
描述
- Switching Frequency min max：
10.0kHz 40.0kHz
- Package ：
TO-220
- Voltage Class max：
600.0V
- IC(@100°) max：
4.9A
- IC(@25°) max：
9.4A
- ICpuls max：
19.0A
- Ptot max：
50.0W
- VCE(sat) ：
2.3V
- Eon ：
0.12mJ
- Eoff(Hard Switching) ：
0.11mJ
- td(on) ：
22.0ns
- tr ：
16.0ns
- td(off) ：
264.0ns
- tf ：
104.0ns
- QGate ：
24.0nC
- VCE max：
600.0V
- Switching Frequency ：
Fast IGBT 10-40 kHz
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
标准封装 |
14048 |
原厂渠道供应,大量现货,原型号开票。 |
|||
TOS |
23+ |
DIP |
50000 |
全新原装假一赔十 |
|||
INF |
2018+ |
26976 |
代理原装现货/特价热卖! |
||||
Infineon |
2025+ |
TO-220 |
5425 |
全新原厂原装产品、公司现货销售 |
|||
INFINEON |
1932+ |
TO-220 |
932 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INFINEON |
25+ |
PG-TOTO-220- |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
INFINEON |
2024+ |
80 |
全新 发货1-2天 |
||||
INFINEON |
24+ |
TO-220 |
5000 |
全新原装正品,现货销售 |
|||
INFINEON/英飞凌 |
25+ |
TO-220 |
74 |
全新原装正品支持含税 |
|||
INF |
24+ |
400 |
SGP04N60芯片相关品牌
SGP04N60规格书下载地址
SGP04N60参数引脚图相关
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- SGM9146
- SGM9144
- SGM9141
- SGM9140
- SGM9137
- SGM9136
- SGM9135
- SGM9134
- SGM9133
SGP04N60数据表相关新闻
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DdatasheetPDF页码索引
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