Fast S-IGBT in NPT-technology

Fast S-IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distributio

Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation

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Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation

Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation

文件：795.82 Kbytes Page：11 Pages

20A, 600V N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand

HiPerFAST IGBT

VCES = 600 V IC25 = 40 A VCE(sat)typ = 1.7 V tfi(typ) = 100 ns Features • International standard packages JEDEC TO-268 surface mountable and JEDEC TO-247 AD • High current handling capability • Latest generation HDMOSTM process • MOS Gate turn-on - drive simplicity

Fast Switching

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N-Channel 650-V (D-S) Super Junction MOSFET

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20A 600V N-channel enhanced field effect transistor

文件：833.85 Kbytes Page：6 Pages