Fast IGBT in NPT-technology

Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution

Fast IGBT in NPT-technology

文件：796.61 Kbytes Page：11 Pages

分立式IGBT

High Speed IGBT in NPT-technology

High Speed IGBT in NPT-technology • 30 lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature -

Fast IGBT in NPT-technology

文件：796.61 Kbytes Page：11 Pages

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：IGBT 600V 31A 139W TO263-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

分立式IGBT

High Speed IGBT in NPT-technology

文件：820.88 Kbytes Page：11 Pages

High Speed IGBT in NPT-technology

文件：820.88 Kbytes Page：11 Pages

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：IGBT 600V 27A 138W TO263-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

15 Amps, 600 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC15N60 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pu

N-Channel 650V (D-S) Power MOSFET

文件：1.0671 Mbytes Page：9 Pages

15A, 600V N-CHANNEL POWER MOSFET

文件：185.37 Kbytes Page：6 Pages

High Switching Speed

文件：49.33 Kbytes Page：2 Pages

CoolMOS Power Transistor

文件：543.38 Kbytes Page：12 Pages