位置：SGB15N60HS > SGB15N60HS详情
SGB15N60HS中文资料
SGB15N60HS数据手册规格书PDF详情
High Speed IGBT in NPT-technology
• 30 lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for operation above 30 kHz
• NPT-Technology for 600V applications offers:
- parallel switching capability
- moderate Eoff increase with temperature
- very tight parameter distribution
• High ruggedness, temperature stable behaviour
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1 for target applications
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
SGB15N60HS产品属性
- 类型
描述
- 型号
SGB15N60HS
- 功能描述
IGBT 晶体管 IGBT PRODUCTS
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
更新时间：2025-12-2 23:00:00
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
标准封装 |
9048 |
原厂渠道供应,大量现货,原型号开票。 |
|||
INFINEON |
SOT-263 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
||||
INFINEON |
24+ |
P-TO263-3-2 |
8866 |
||||
INFINEON |
12+ |
TO-263 |
15000 |
全新原装,绝对正品,公司现货供应。 |
|||
INFINEON |
21+ |
TO-263 |
10000 |
原装现货假一罚十 |
|||
INFINEON |
25+ |
PG-TO263-3 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
INFINEON |
24+ |
TO263 |
56800 |
特价现货,下单送华为手机.香港 日本 新加坡 |
|||
INFINEON/英飞凌 |
24+ |
TO-263 |
30000 |
只做正品原装现货 |
|||
Infineon(英飞凌) |
25+ |
标准封装 |
8800 |
公司只做原装,详情请咨询 |
|||
Infineon(英飞凌) |
24+ |
N/A |
9855 |
原装正品现货支持实单 |
SGB15N60HS 资料下载更多...
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- HTB-34M4
- ITS4140N
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- Q67050-A4156-A001
- SIDC01D120H6
- SIDC04D60F6
- SP000219533
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INFINEON相关芯片制造商
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