Fast S-IGBT in NPT-technology

Fast S-IGBT in NPT-technology • 40 lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for:    - Motor controls    - Inverter    - SMPS • NPT-Technology offers:    - very tight parameter distribution    - high ruggedness, temperature stable behavio

Fast IGBT in NPT-technology Lower Eoff compared to previous generation

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Fast IGBT in NPT-technology Lower Eoff compared to previous generation

文件：439.41 Kbytes Page：11 Pages

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：IGBT 1200V 6.2A 62W TO263-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for:     - Motor controls     - Inverter     - SMPS • NPT-Technology offers:     - very tight parameter distributi

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 0.2A@ TC=25℃ ·Drain Source Voltage : VDSS= 1200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 75Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed fo

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=0.2A@ TC=25℃ ·Drain Source Voltage -VDSS=1200V(Min) ·Static Drain-Source On-Resistance -RDS(on) =75Ω(Max)@VGS = 10 V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel Enhancement Mode Avalanche Rated

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N-Channel Enhancement Mode Avalanche Rated

文件：134.57 Kbytes Page：4 Pages