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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SGB02N120_07 | Fast IGBT in NPT-technology Lower Eoff compared to previous generation 文件：439.41 Kbytes Page：11 Pages | Infineon 英飞凌 |   | |
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: 1s. • lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for frequency inverters for washing machi | Infineon 英飞凌 | | ||
Fast IGBT in NPT-technology 40 lower Eoff compared to previous generation 文件：382.36 Kbytes Page：13 Pages | Infineon 英飞凌 | |
SGB02N120_07产品属性
- 类型
描述
- 型号
SGB02N120_07
- 制造商
INFINEON
- 制造商全称
Infineon Technologies AG
- 功能描述
Fast IGBT in NPT-technology Lower Eoff compared to previous generation
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
NA/ |
5000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
TOS |
23+ |
SOP |
50000 |
全新原装假一赔十 |
|||
INFINEON/英飞凌 |
2450+ |
NA |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
Infineon |
07+ |
TO-263 |
30000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INFINEON/英飞凌 |
22+ |
TO-263 |
30000 |
只做原装正品 |
|||
INFINEON/英飞凌 |
09+ |
TO-263 |
12800 |
||||
Infineon Technologies |
21+ |
PG-TO263-3 |
1000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
|||
INFINEON |
17+ |
TO-263 |
6200 |
100%原装正品现货 |
|||
Infineon Technologies |
22+ |
TO2633 |
9000 |
原厂渠道,现货配单 |
|||
INFINEON |
24+ |
P-TO263-3-2 |
8866 |
SGB02N120_07芯片相关品牌
SGB02N120_07规格书下载地址
SGB02N120_07参数引脚图相关
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SGB02N120_07数据表相关新闻
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2020-11-6
DdatasheetPDF页码索引
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