型号 功能描述 生产厂家&企业 LOGO 操作
SGB02N120_07

Fast IGBT in NPT-technology Lower Eoff compared to previous generation

文件:439.41 Kbytes Page:11 Pages

Infineon

英飞凌

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: 1s. • lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for frequency inverters for washing machi

Infineon

英飞凌

Fast IGBT in NPT-technology 40 lower Eoff compared to previous generation

文件:382.36 Kbytes Page:13 Pages

Infineon

英飞凌

SGB02N120_07产品属性

  • 类型

    描述

  • 型号

    SGB02N120_07

  • 制造商

    INFINEON

  • 制造商全称

    Infineon Technologies AG

  • 功能描述

    Fast IGBT in NPT-technology Lower Eoff compared to previous generation

更新时间:2025-8-18 8:43:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INF
21+
TO-263-2
10000
原装现货假一罚十
INFINEON/英飞凌
22+
TO-263
87062
INFINEON
17+
TO-263
6200
100%原装正品现货
Infineon Technologies
21+
PG-TO263-3
1000
100%进口原装!长期供应!绝对优势价格(诚信经营)!
Infineon Technologies
24+
原装
5000
原装正品,提供BOM配单服务
INFINEON/英飞凌
2021+
45000
十年专营原装现货,假一赔十
INFINEON
24+
P-TO263-3-2
8866
Infineon
1728+
?
7500
只做原装进口,假一罚十
Infineon
07+
TO-263
30000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
INFINEON/英飞凌
23+
TO-263
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO

SGB02N120_07数据表相关新闻