Advanced Power MOSFET

FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● 175oC Operating Temperature ● Lower Leakage Current : 10 µA (Max.) @ VDS = -100V ● Low RDS(ON) : 0.912 Ω (Typ.)

isc P-Channel MOSFET Transistor

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Advanced Power MOSFET

P-channel Enhancement Mode Power MOSFET

Features  VDS= -100V, ID= -13A RDS(ON)

RS232, #24-10pr, SR-PVC, O/A Foil, PVC Jkt, CMG, 75Ω

Product Description Computer EIA RS-232 Cable, 24 AWG stranded (7x32) tinned copper conductors, semi-rigid PVC insulation, 10 twisted pairs, overall Beldfoil® shield (100 coverage), 24 AWG stranded tinned copper drain wire (continued), PVC jacket.

RS-232, 10PR #24 Str TC, PO ins, OS, LSZH Jkt, 300V

Product Description 10-Pair, 24 AWG stranded (7x32) TC conductors, PE insulation, twisted pairs, overall Beldfoil shield (100 coverage), 24 AWG stranded TC drain Wire, LSZH jacket, Flame resistance IEC 60332-3C

MACHINE SCREW PAN PHILLIPS 10-32

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Simulators.

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TCXO Specification

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