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SFT5014

0.5 AMP, 800 ??900 Volts NPN Transistor

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SSDI

0.5 A, 400 V NPN Transistor

• BVCER to 900 volts\n• Low Leakage at High Temperature\n• 200°C Operating, Gold Eutectic Die Attach\n• Designed for Complementary Use with SFT5094 and SFT5096\n• TX, TXV, and S-Level Screening Available;

SSDI

0.5 A, 400 V NPN Transistor

• BVCER to 900 volts\n• Low Saturation Voltage\n• Low Leakage at High Temperature\n• High Gain, Low Saturation\n• 200°C Operating, Gold Eutectic Die Attach\n• 2N5010 thru 2N5012 Also Available, Contact Factory\n• Designed for Complementary Use with SFT5094 and SFT5096\n• TX, TXV, and S-Level Screeni;

SSDI

0.5 AMP 800 - 1000 VOLTS NPN TRANSISTOR

FEATURES: • Low Profile Surface Mount Package • 200oC Operating Eutectic Die Attach • BVCER and BVCBO to 1000V • Low Leakage at High Temperature • High Gain, Low Saturation • TX, TXV and Space Level screening available • Designed for Complimentary Use with SFT5094-4

SSDI

0.5 A, 400 V NPN Transistor

• BVCER to 900 volts\n• Low Leakage at High Temperature\n• 200°C Operating, Gold Eutectic Die Attach\n• Designed for Complementary Use with SFT5094 and SFT5096\n• TX, TXV, and S-Level Screening Available;

SSDI

NPN Transistor

文件:135.22 Kbytes Page:2 Pages

SSDI

NPN Transistor

文件:135.22 Kbytes Page:2 Pages

SSDI

NPN Transistor

文件:135.22 Kbytes Page:2 Pages

SSDI

Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally

ADPOW

Dot Matrix LED

■ General Description Sharps dot matrix LEDs can express characters and symbols on a display. (Number of dots: 5✕7, 8✕8, 16✕16). We can supply wide color variation; high-luminosity red T series, yellow-green E series, sunset orange S series, dichromatic emission, etc.

SHARPSharp Corporation

夏普

Zener Diode, 1/2 Watt 짹5 Tolerance

Features: ● Zener Voltage 2.4 to 200V ● DO35 Package

NTE

Zener Diode, 300mW 짹5 Tolerance

Features: Zener Voltage 3.3V to 24V SOT–23 Type Surface Mount Package Absolute Maximum Ratings: Maximim Repetitive Peak Forward Current, IFRM . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA Maximim Repetitive Peak Working Current, IZRM . . . . . . . . . . . . . . . .

NTE

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

文件:71.52 Kbytes Page:2 Pages

ADPOW

SFT5014产品属性

  • 类型

    描述

  • Ic [A]:

    0.50

  • Hfe min:

    30

  • Hfe typ:

    70.00

  • Hfe max:

    180

  • Pd [W]:

    2.00

  • t(off) min [nsec]:

    N/A

  • t(off) typ [nsec]:

    2

  • t(off) max [nsec]:

    3800

  • fT min [MHz]:

    20.00

  • fT typ [MHz]:

    30.00

  • fT max [MHz]:

    N/A

  • Package:

    TO-5

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